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data sheet caution observe precautions when handling because these devices are sensitive to electrostatic discharge. the information in this document is subject to change without notice. before using this document, please confirm that this is the latest version. hetero junction field effect transistor ne3510m04 l to s band low noise amplifier n-channel hj-fet document no. pg10676ej01v0ds (1st edition) date published july 2007 ns 2007 features ? low noise figure and high associated gain nf = 0.45 db typ., g a = 16 db typ. @ f = 4 ghz, v ds = 2 v, i d = 15 ma nf = 0.35 db typ., g a = 19 db typ. @ f = 2 ghz, v ds = 2 v, i d = 10 ma (reference only) ? flat-lead 4-pin thin-type super minimold (m04) package applications ? satellite radio (sdars, dmb, etc.) antenna lna ? low noise amplifier for microwave communication system ordering information part number order number package quantity marking supplying form 1 8 v ) l e e r n o n ( s c p 0 5 a - 4 0 m 0 1 5 3 e n 4 0 m 0 1 5 3 e n NE3510M04-T2 NE3510M04-T2-a flat-lead 4-pin thin- type super minimold (m04) (pb-free) 3 kpcs/reel ? 8 mm wide embossed taping ? pin 1 (source), pin 2 (drain) face the perforation side of the tape remark to order evaluation samples, contact your nearby sales office. part number for sample order: ne3510m04-a absolute maximum ratings (t a = +25 $ c) parameter symbol ratings unit drain to source voltage v ds 4.0 v gate to source voltage v gs < 3.0 v i t n e r r u c n i a r d d i dss ma i t n e r r u c e t a g g 140 + a total power dissipation p tot note 125 mw channel temperature t ch +150 $ c storage temperature t stg < 65 to +150 $ c note mounted on 1.08 cm 2 = 1.0 mm (t) glass epoxy pcb
data sheet pg10676ej01v0ds 2 ne3510m04 recommended operating conditions (t a = +25 $ c) parameter symbol min. typ. max. unit drain to source voltage v ds < 23v i t n e r r u c n i a r d d < 15 30 ma p r e w o p t u p n i in << 0 dbm electrical characteristics (t a = +25 $ c, unless otherwise specified) parameter symbol test conditions min. typ. max. unit gate to source leak current i gso v gs = < 3v < 0.5 10 + a saturated drain current i dss v ds =2v, v gs a m 7 9 0 7 2 4 v 0 = gate to source cutoff voltage v gs (off) v ds =2v, i d =100 + a < 0.35 < 0.7 < 1.10 v g e c n a t c u d n o c s n a r t m v ds =2v, i d =15ma 70 << ms v f n e r u g i f e s i o n ds =2v, i d = 15 ma, f = 4 ghz < 0.45 0.65 db g n i a g d e t a i c o s s a a 6 1 5 . 4 1 < db gain 1 db compression p o(1db) v ds =2v, i d = 15 ma (non-rf), < +11 < dbm z h g 4 = f r e w o p t u p t u o
data sheet pg10676ej01v0ds 3 ne3510m04 typical characteristics (t a =+25 $ c, unless otherwise specified) 250 200 150 100 50 0 50 100 150 200 250 v ds = 2 v 100 90 80 70 60 50 40 30 20 10 0 C1.0 C0.8 C0.6 C0.4 C0.2 0 1.2 0.8 0.9 1.0 1.1 0.3 0.6 0.7 0.1 0.2 0.0 24 22 20 18 16 14 12 10 8 6 4 2 0 051015 nf min g a v ds = 2 v i d = 15 ma 0.5 0.4 1.2 0.8 0.9 1.0 1.1 0.3 0.6 0.7 0.1 0.2 0.0 24 22 20 18 16 14 12 10 8 6 4 2 0 0 5 10 15 20 25 30 35 nf min g a f = 2.0 ghz v ds = 2 v 0.5 0.4 1.2 0.8 0.9 1.0 1.1 0.3 0.6 0.7 0.1 0.2 0.0 24 22 20 18 16 14 12 10 8 6 4 2 0 nf min g a f = 4.0 ghz v ds = 2 v 0.5 0.4 0 5 10 15 20 25 30 35 total power dissipation p tot (mw) ambient temperature t a ( $ c) vs. ambient temperature total power dissipation mounted on glass epoxy pcb (1.08 cm 2 = 1.0 mm (t) ) drain current i d (ma) gate to source voltage v gs (v) drain current vs. gate to source voltage frequency f (ghz) minimum noise figure nf min (db) associated gain g a (db) associated gain vs. frequency minimum noise figure, drain current i d (ma) drain to source voltage v ds (v) drain to source voltage drain current vs. drain current i d (ma) minimum noise figure nf min (db) associated gain g a (db) associated gain vs. drain current minimum noise figure, drain current i d (ma) minimum noise figure nf min (db) associated gain g a (db) associated gain vs. drain current minimum noise figure, 100 90 80 70 60 50 40 30 20 10 0 0 12345 v gs = 0 v C 0.2 v C 0.3 v C 0.1 v C 0.4 v C 0.5 v C 0.6 v C 0.7 v remark the graphs indicate nominal characteristics.
data sheet pg10676ej01v0ds 4 ne3510m04 output power p out (1 tone) (dbm) gain (db) input power p in (1 tone) (dbm) drain current i d (ma) gate current i g (ma) gate current vs. input power output power, gain, drain current, vs. input power output power, im 3, drain current output power p out (1 tone) (dbm) 3rd order intermodulation distortion im 3 (dbm) input power p in (1 tone) (dbm) drain current i d (ma) C 20 C 0 1 5 5 10 5 1 5 C 0 1 C 20 15 5 0 C5 C10 10 p out (1 tone) i g gain i d 60 50 40 30 20 10 0 f = 4 ghz, v ds = 2v i d = 15 ma set (non-rf) C 0 0 4 C10 0 1 0 2 C 0 3 C 30 20 C10 C20 C30 C40 C50 C60 C70 10 0 f = 4 ghz, v ds = 2v i d = 15 ma set (non-rf) p out im 3 (l) im 3 (h) iip 3 = +4 dbm i d 50 45 40 35 30 25 20 15 10 5 0 oip 3 = +20 dbm remark the graphs indicate nominal characteristics.
data sheet pg10676ej01v0ds 5 ne3510m04 s-parameters s-parameters/noise parameters are provided on our web site in a form (s2p) that enables direct import to a microwave circuit simulator without keyboard input. click here to download s-parameters. [rf and microwave] a [device parameters] url http://www.ncsd.necel.com/microwave/index.html
data sheet pg10676ej01v0ds 6 ne3510m04 package dimensions flat-lead 4-pin thin-type super minimold (m04) (unit: mm) pin connections 1. source 2. drain 3. source 4. gate 0.590.05 0.11 +0.1 C0.05 (bottom view) 3 4 2 1 1.25 2.00.1 1.30 (1.05) 0.60 0.65 0.65 0.65 1.30 1.25 2.00.1 2 1 3 4 1.250.1 2.050.1 0.30 +0.1 C0.05 0.40 +0.1 C0.05 0.30 +0.1 C0.05 0.30 +0.1 C0.05 v81
data sheet pg10676ej01v0ds 7 ne3510m04 mounting pad dimensions (reference only) flat-lead 4-pin thin-type super minimold (m04) package (unit: mm) 2 1 3 4 0.6 1.6 1.25 1.3 0.6 0.5
data sheet pg10676ej01v0ds 8 ne3510m04 recommended soldering conditions this product should be soldered and mounted under the following recommended conditions. for soldering methods and conditions other than those recommended below, contact your nearby sales office. g n i r e d l o s d o h t e m g n i r e d l o s l o b m y s n o i t i d n o c s n o i t i d n o c infrared reflow peak temperature (package surface temperature) : 260 $ c or below s s e l r o s d n o c e s 0 1 : e r u t a r e p m e t k a e p t a e m i t time at temperature of 220 $ c or higher : 60 seconds or less preheating time at 120 to 180 $ 0 2 1 : c ( 30 seconds maximum number of reflow processes : 3 times maximum chlorine content of rosin flux (% mass) : 0.2%(wt.) or below ir260 partial heating peak temperature (terminal temperature) : 350 $ c or below soldering time (per side of device) : 3 seconds or less maximum chlorine content of rosin flux (% mass) : 0.2%(wt.) or below hs350 caution do not use different soldering methods together (except for partial heating).
data sheet pg10676ej01v0ds 9 ne3510m04 the information in this document is current as of july, 2007. the information is subject to change without notice. for actual design-in, re fer to the latest publications of nec electronics data sheets or data books, etc., for the most up-to-date specifications of nec electronics products. not all products and/or types are available in every country. please check with an nec electronics sales representative for availability and additional information. no part of this document may be copied or reproduced in any form or by any means without the prior written consent of nec electronics. nec electronics assumes no responsibility for any errors that may appear in this document. nec electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of nec electronics products listed in this document or any other liability arising from the use of such products. no license, express, implied or otherwise, is granted under any patents, copyrights or other in tellectual property righ ts of ne c electronics or others. descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. the incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. nec electronics assumes no responsibility for any losses incurred by customers or third parties a rising from the use of these circuits, software and in formation. while nec electronics endeavors to enhance the qu ality, reliability and safety of nec electronics products, customers agree and acknowledge that the poss ibility of defects thereof cannot be eliminated entirely. to minimize risks of damage to property or injury (inc luding death) to persons arising from defects in nec electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. nec electronics products are classified into the fol lowing three quality gra des: "standard", "special" and "specific". the "specific" quality grade applies only to nec electronics produc ts developed based on a customer- designated "quality assurance program" for a spe cific application. the recommended applications of an nec electronics product depend on its quality grade, as indicated below. customers must check the quality grade of each nec elect ronics product before using it in a particular application. the quality grade of nec electronics products is "standard" unless otherwise expressly specified in nec electronics data sheets or data books, etc. if customers wish to use nec electronics products in a pplications not intended by nec electronics, they must contact an nec electronics sales representative in advance to determine nec electronics' willingness to support a given application. (note) % % % % % % m8e 02. 11-1 (1) (2) "nec electronics" as used in this statement means nec electronics cor poration and also includes its majority-owned subsidiaries. "nec electronics products" means any product developed or manufactured by or for nec electronics (as defined above). computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. "standard": "special": "specific":
ne3510m04 caution gaas products this product uses gallium arsenide (gaas). gaas vapor and powder are hazardous to human health if inhaled or ingested, so please observe the following points. ? follow related laws and ordinances when disposing of the product. if there are no applicable laws and/or ordinances, dispose of the product as recommended below. 1. commission a disposal company able to (with a license to) collect, transport and dispose of materials that contain arsenic and other such industrial waste materials. 2. exclude the product from general industrial waste and household garbage, and ensure that the product is controlled (as industrial waste subject to special control) up until final disposal. ? do not burn, destroy, cut, crush, or chemically dissolve the product. ? do not lick the product or in any way allow it to enter the mouth.
4590 patrick henry drive santa clara, ca 95054-1817 telephone: (408) 919-2500 facsimile: ( 408 ) 988-0279 subject: compliance with eu directives cel certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of european union (eu) directive 2002/95/ec restriction on use of hazardous substances in electrical and electronic equipment (rohs) and the requirements of eu directive 2003/11/ec restriction on penta and octa bde. cel pb-free products have the same base part number with a suffix added. the suffix Ca indicates that the device is pb-free. the Caz suffix is used to designate devices containing pb which are exempted from the requirement of rohs directive (*). in all cases the devices have pb-free terminals. all devices with these suffixes meet the requirements of the rohs directive. this status is based on cels understanding of the eu directives and knowledge of the materials that go into its products as of the date of disclosure of this information. restricted substance per rohs concentration limit per rohs (values are not yet fixed) concentration contained in cel devices -a -az lead (pb) < 1000 ppm not detected (*) mercury < 1000 ppm not detected cadmium < 100 ppm not detected hexavalent chromium < 1000 ppm not detected pbb < 1000 ppm not detected pbde < 1000 ppm not detected if you should have any additional questions regarding our devices and compliance to environmental standards, please do not hesitate to contact your local representative. important information and disclaimer: information provided by cel on its website or in other communications concerting the substance content of its products represents knowledge and belief as of the date that it is provided. cel bases its knowledge and belief on information provided by third parties and makes no representation or warranty as to the accuracy of such information. efforts are underway to better integrate information from third parties. cel has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. cel and cel suppliers consider certain information to be proprietary, and thus cas numbers and other limited information may not be available for release. in no event shall cels liability arising out of such information exceed the total purchase price of the cel part(s) at issue sol d by cel to customer on an annual basis. see cel terms and conditions for additional clarification of warranties and liability.

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